EXCITONIC PHOTON ABSORPTION-EMISSION CHARACTERISTICS IN ZNCDSE-ZNSE SINGLE-QUANTUM-WELL STRUCTURES

被引:8
|
作者
ANDO, K
OHKI, A
ZEMBUTSU, S
机构
[1] NTT Optoelectronics Laboratories, Ibaraki
关键词
ZNCDSE-ZNSE QW; MOVPE; SQW; EXCITONIC ABSORPTION AND EMISSION; STIMULATED EMISSION; BLUEGREEN LD; LOCALIZED EXCITON;
D O I
10.1143/JJAP.31.L1362
中图分类号
O59 [应用物理学];
学科分类号
摘要
Excitonic photon absorption and emission processes are investigated under zero or external electric fields on MOVPE grown (Zn1-xCdx)Se-ZnSe:x=0.18 single quantum wells (SQWs). The effects of a dc electric field applied perpendicularly on absorption and emission processes are examined by electric field-controlled photoluminescence (PL), electroreflectance (ER) and photocurrent (PC) spectrum measurements. The characteristics of optically excited spontaneous and stimulated emissions from the SQWs are different in both spectrum peak energies and field effects from those expected in the heavy hole mass (H-H exciton round state n=1 in quantum wells.
引用
收藏
页码:L1362 / L1365
页数:4
相关论文
共 50 条
  • [1] EXCITONIC EMISSION IN ZNCDSE-ZNSE MULTIPLE-QUANTUM WELLS
    ZHANG, JY
    FAN, XW
    YANG, BJ
    GUAN, ZP
    LU, YM
    SHEN, DZ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 838 - 841
  • [2] Optical gain in ZnCdSe-ZnSe quantum well structures
    Rees, P
    Heffernan, JF
    Logue, FP
    Donegan, JF
    Jordan, C
    Hegarty, J
    Hiei, F
    Ishibashi, A
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV, 1996, 2693 : 121 - 127
  • [3] Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well
    Logue, FP
    Fewer, DT
    Hewlett, SJ
    Heffernan, JF
    Jordan, C
    Rees, P
    Donegan, JF
    McCabe, EM
    Hegarty, J
    Taniguchi, S
    Hino, T
    Nakano, K
    Ishibashi, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) : 536 - 538
  • [4] Properties of excitonic photoluminescence from ZnCdSe/ZnSe quantum well structures
    Wang, XJ
    Huang, DM
    Wei, YF
    Sheng, CX
    Yu, GC
    [J]. OPTICAL MATERIALS, 2000, 14 (03) : 197 - 200
  • [5] Stimulated emission of optically excited MOVPE grown ZnCdSe-ZnSe GRINSCH quantum well
    Guennani, D
    Tomasiunas, R
    Pelant, I
    Petrauskas, M
    Cloitre, T
    Aulombard, R
    Grun, JB
    Levy, R
    [J]. JOURNAL OF LUMINESCENCE, 1997, 72-4 : 340 - 341
  • [6] CHARACTERISTICS OF ZNCDSE SINGLE-QUANTUM-WELL LASER-DIODES
    TSUJIMURA, A
    YOSHII, S
    HAYASHI, S
    OHKAWA, K
    MITSUYU, T
    TAKEISHI, H
    [J]. PHYSICA B, 1993, 191 (1-2): : 130 - 132
  • [7] Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many body effects
    Rees, P
    Logue, FP
    Donegan, JF
    Heffernan, JF
    Jordan, C
    Hegarty, J
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3780 - 3782
  • [8] Excitonic molecules and stimulated emission in a ZnSe single quantum well
    Kozlov, V
    Kelkar, P
    Nurmikko, AV
    Chu, CC
    Grillo, DC
    Han, J
    Hua, CG
    Gunshor, RL
    [J]. PHYSICAL REVIEW B, 1996, 53 (16): : 10837 - 10840
  • [9] Excitonic spontaneous and stimulated emission in ZnSe-ZnCdSe multiple quantum wells
    Fan, XW
    Guan, ZP
    Zheng, ZH
    Zhang, JY
    [J]. BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 449 - 452
  • [10] CAVITY PARAMETERS OF ZNCDSE/ZNSE SINGLE-QUANTUM-WELL SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASER-DIODES
    TSUJIMURA, A
    YOSHII, S
    HAYASHI, S
    OHKAWA, K
    MITSUYU, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12A): : L1750 - L1752