1/F NOISE IN ION-IMPLANTED INDIUM-PHOSPHIDE LAYERS

被引：11
|
作者：
TACANO, M
OIGAWA, K
SUGIYAMA, Y
机构：
[1] Electrotechnical Lab, Tsukuba, Jpn, Electrotechnical Lab, Tsukuba, Jpn
来源：
SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期
关键词：
SEMICONDUCTOR DEVICES - Noise;
D O I：
10.1016/0038-1101(88)90421-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The frequency dependence of noise levels in ion-implanted devices of InP follows Hooge's relationship left bracket Phys. Lett. A-29, 139 (1969) right bracket . The noise levels vary in proportion to the square of the terminal voltages, and decrease linearly with the frequency and the total carriers throughout the ranges from 0. 1 Hz to 100 kHz. The Hooge parameter is alpha //H equals 1. 5 multiplied by 10** minus **4.
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页码：1243 / 1245
页数：3
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