Carrier-enhanced Ferromagnetism in Cr-doped ZnO

被引：0
|
作者：
Sim, Jae Ho [1 ]
Kim, Hyojin [1 ]
Kim, Dojin [1 ]
Ihm, Young Eon [1 ]
Yoon, Soon Kil [1 ]
Kim, Hyun Jung [2 ]
Choo, Woong Kil [2 ]
机构：
[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 305764, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 305701, South Korea
来源：
JOURNAL OF THE KOREAN MAGNETICS SOCIETY | 2005年 / 15卷 / 03期
关键词：
diluted magnetic semiconductors; ZnO; ZnCrO; ferromagnetism; spintronics;
D O I：
10.4283/JKMS.2005.15.3.181
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor Zn1-xCrxO thin films prepared by reactive sputtering. Nondoped Zn0.99Cr0.01O thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.
引用
收藏
页码：181 / 185
页数：5
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