ELECTRONIC AND OPTICAL-PROPERTIES OF QUASI-ONE-DIMENSIONAL CARRIERS IN QUANTUM WIRES

被引：25

作者：

GRUNDMANN, M ^{[1
]}

CHRISTEN, J ^{[1
]}

BIMBERG, D ^{[1
]}

KAPON, E ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE, DEPT PHYS, INST MICRO & OPTOELECTR, CH-1015 LAUSANNE, SWITZERLAND

来源：

JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS | 1995年 / 4卷 / 01期

关键词：

D O I：

10.1142/S0218863595000069

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We review structural and optical properties of quantum wires (QWRs), grown on nonplanar substrates. Our approach of in situ wire formation on patterned substrates allows us to fabricate defect free QWRs of high optical quality, suitable for laser and other optoelectronic applications. Several types of wires and wire arrangements are investigated in detail: single QWRs, vertical QWR stacks, lateral sub-mu m pitch QWR arrays and pseudomorphic QWRs. Theoretical calculations are performed for electronic eigenstates (with inclusion of strain effects) as well as the lineshape of spontaneous radiative recombination. The lateral bandgap modulation, carrier capture into the QWRs, subsequent intersubband relaxation, cooling, interband recombination, and bandgap renormalization are systematically investigated and compared to current theories and previously obtained results for quantum wells or bulk material.

引用

页码：99 / 140

页数：42

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