GAMMA-X TRANSFER RATES IN TYPE-II (AL)GAAS/ALAS SUPERLATTICES

被引：8
|
作者：
FELDMANN, J
SATTMANN, R
GOBEL, EO
NUNNENKAMP, J
KUHL, J
HEBLING, J
PLOOG, K
MURALIDHARAN, R
DAWSON, P
FOXON, CT
机构：
[1] ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY
[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
[3] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期
关键词：
Crystals - Physical Properties - Semiconducting Aluminum Compounds;
D O I：
10.1016/0038-1101(89)90300-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have experimentally determined the Γ-X transfer rates in type II GaAs/AlAs short period superlattices as well as in type II AlxGa1-xAs/AlAs superlattices by femtosecond optical pump and probe spectroscopy. Γ-X transfer times in the range from 120 fs up to 22 ps are observed for samples with different GaAs- or AlxGa1-xAs layer-thicknesses. The drastic increase of the transfer times with increasing layer-thickness can be related to a decreasing overlap of the Γ- and X-envelope wavefunctions.
引用
收藏
页码：1713 / 1717
页数：5
相关论文
共 50 条
  • [1] DETERMINATION OF GAMMA-X TRANSFER RATES IN TYPE-II (AL)GAAS/ALAS SUPERLATTICES
    FELDMANN, J
    SATTMANN, R
    PETER, G
    GOBEL, EO
    NUNNENKAMP, J
    KUHL, J
    HEBLING, J
    PLOOG, K
    CINGOLANI, R
    MURALIDHARAN, R
    DAWSON, P
    FOXON, CT
    [J]. SURFACE SCIENCE, 1990, 229 (1-3) : 452 - 455
  • [2] GAMMA-X MIXING IN TYPE-II GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    VOLIOTIS, V
    GROUSSON, R
    LAVALLARD, P
    IVCHENKO, EL
    KISELEV, AA
    PLANEL, R
    [J]. JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 237 - 240
  • [3] GAMMA-X MIXING EFFECTS ON PHOTOLUMINESCENCE INTENSITY IN GAAS/ALAS TYPE-II SUPERLATTICES
    NAKAYAMA, M
    IMAZAWA, K
    TANAKA, I
    NISHIMURA, H
    [J]. SOLID STATE COMMUNICATIONS, 1993, 88 (01) : 43 - 46
  • [4] GAMMA-X CROSSOVER IN GAAS/ALAS SUPERLATTICES
    KATO, H
    OKADA, Y
    NAKAYAMA, M
    WATANABE, Y
    [J]. SOLID STATE COMMUNICATIONS, 1989, 70 (05) : 535 - 539
  • [5] PHONON-ASSISTED GAMMA-X TRANSITION RATES IN TYPE-II SUPERLATTICES
    ERDOGAN, MU
    SANKARAN, V
    KIM, KW
    STROSCIO, MA
    IAFRATE, GJ
    [J]. PHYSICAL REVIEW B, 1994, 50 (04): : 2485 - 2491
  • [6] GAMMA-X MIXING EFFECT IN GAAS ALAS SUPERLATTICES AND HETEROJUNCTIONS
    XIA, JB
    [J]. PHYSICAL REVIEW B, 1990, 41 (05): : 3117 - 3122
  • [7] EXPERIMENTAL-STUDY OF THE GAMMA-X ELECTRON-TRANSFER IN TYPE-II (AL,GA)AS/ALAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES
    FELDMANN, J
    NUNNENKAMP, J
    PETER, G
    GOBEL, E
    KUHL, J
    PLOOG, K
    DAWSON, P
    FOXON, CT
    [J]. PHYSICAL REVIEW B, 1990, 42 (09): : 5809 - 5821
  • [8] PHONON-ASSISTED GAMMA-X TRANSFER IN (001)-GROWN GAAS/ALAS SUPERLATTICES
    RAICHEV, OE
    [J]. PHYSICAL REVIEW B, 1994, 49 (08) : 5448 - 5462
  • [9] Temperature dependence of Gamma to X-z electron transfer times in type-II GaAs/AlAs superlattices
    dePaula, AM
    Weber, G
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 204 (01): : 198 - 200
  • [10] Evidence of Gamma-X sequential resonant tunneling in GaAs/AlAs superlattices
    Sun, BQ
    Jiang, DS
    Liu, ZX
    Zhang, YH
    Liu, W
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (04) : 520 - 522
12345