MECHANISMS OF ULTRASOUND-INDUCED CHANGES IN ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF SINGLE-CRYSTALS OF ZNXCD1-XTE SOLID-SOLUTIONS

A study was made of the influence of ultrasound on electrical and photoelectric properties, and on the luminescence emitted by ZnxCd1-xTe crystals. Two processes determined the influence of ultrasound on electrical and photoelectric properties of ZnxCd1-xTe: 1) and increase in the dislocation density followed by migration of mobile acceptors, governing the conduction process, toward dislocations; 2) migration of these acceptors away from dislocations into the bulk of a crystal. The former process dominated in samples with a low dislocation density (< 10(5) cm-2) and reduced the dark conductivity sigma-d, the luminescence intensity W, and the photocurrent I(ph). The second process dominated in samples with higher values of the dislocation density gamma (> 10(6) cm-2) and it increased sigma-d, W, and I(ph).