LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB ON GAAS

被引：0
|
作者：
HARIU, T
OHSHIMA, T
YAMAUCHI, S
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：233 / 236
页数：4
相关论文
共 50 条
  • [1] LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB ON GAAS
    HARIU, T
    OHSHIMA, T
    YAMAUCHI, S
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 233 - 236
  • [2] DIISOPROPYLANTIMONYHYDRIDE (DIPSBH) FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB
    SHIN, J
    CHIU, K
    STRINGFELLOW, GB
    GEDRIDGE, RW
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) : 371 - 376
  • [3] THE EFFECT OF HYDROGEN PLASMA ON THE LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB
    OHSHIMA, T
    YAMAUCHI, S
    HARIU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (01): : L13 - L15
  • [4] TRISDIMETHYLAMINOANTIMONY - A NEW SB SOURCE FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB
    SHIN, J
    VERMA, A
    STRINGFELLOW, GB
    GEDRIDGE, RW
    JOURNAL OF CRYSTAL GROWTH, 1994, 143 (1-2) : 15 - 21
  • [5] LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON (100) SILICON SUBSTRATES
    CHRISTOU, A
    WILKINS, BR
    TSENG, WF
    ELECTRONICS LETTERS, 1985, 21 (09) : 406 - 408
  • [6] EPITAXIAL-GROWTH OF INSB ON SEMIINSULATING GAAS BY LOW-PRESSURE MOCVD
    IWAMURA, Y
    WATANABE, N
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 371 - 376
  • [7] LOW-TEMPERATURE EPITAXIAL-GROWTH OF (100) SILICON
    MILOSAVLJEVIC, M
    JEYENS, C
    WILSON, IH
    ELECTRONICS LETTERS, 1983, 19 (17) : 669 - 671
  • [8] LOW-TEMPERATURE GAAS/SI TECHNOLOGY - FROM SI SUBSTRATE PREPARATION TO THE EPITAXIAL-GROWTH
    GONZALEZ, Y
    GONZALEZ, L
    BRIONES, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7A): : L816 - L819
  • [9] LOW-TEMPERATURE SUBSTRATE ANNEALING OF VICINAL SI(100) FOR EPITAXIAL-GROWTH OF GAAS ON SI
    OKADA, Y
    SHIMOMURA, H
    SUGAYA, T
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3774 - 3776
  • [10] Early stages of low temperature epitaxial growth of InSb on GaAs
    Borowska, A
    Gutek, J
    Czajka, R
    Oszwaldowski, M
    Richter, A
    CRYSTAL RESEARCH AND TECHNOLOGY, 2005, 40 (4-5) : 523 - 526
12345