INFLUENCE OF AN ELECTRIC-FIELD ON THE ACCUMULATION OF THE A-CENTERS AND E-CENTERS IN SILICON

被引：0

作者：

BOBRIKOVA, OV

STAS, VF

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来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 01期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：88 / 89

页数：2

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[1] JAHN-TELLER DISTORTIONS OF A-CENTERS AND E-CENTERS IN SILICON
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[8] Interaction of A-centers with isovalent impurities in silicon
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[9] THE PRODUCTION AND THE EVOLUTION OF A-CENTERS AND DIVACANCIES IN SILICON
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[10] INTERACTION OF INTERSTITIAL CARBON-ATOMS AND E-CENTERS IN IRRADIATED SILICON
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