SILICON MIGRATION DURING MOVPE OF ALGAAS/GAAS LASER STRUCTURES

被引：5
|
作者：
VEUHOFF, E
BAUMEISTER, H
TREICHLER, R
机构：
[1] Siemens Research Lab, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(88)90598-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
22
引用
收藏
页码：650 / 655
页数：6
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