APPLICATION OF PHOTO-ASSISTED ETCHING TECHNOLOGY TO PREFERENTIAL ETCHING OF SI FOR DIELECTRICALLY ISOLATED STRUCTURE

被引：1
|
作者：
OZAWA, K
ITO, T
ISHIKAWA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 09期
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D O I：
10.1143/JJAP.26.1509
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1509 / 1512
页数：4
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