NONEQUILIBRIUM POPULATION OF EDGE STATES AND A ROLE OF CONTACTS IN THE QUANTUM HALL REGIME

被引：16
|
作者：
KOMIYAMA, S [1 ]
HIRAI, H [1 ]
SASA, S [1 ]
FUJII, T [1 ]
机构：
[1] FUJITSU LABS LTD,SEMICOND MAT LAB,ATSUGI 24301,JAPAN
来源：
SURFACE SCIENCE | 1990年 / 229卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90876-A
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Heterostructure (GaAs/AlGaAs) Hall-bar devices with a short cross gate are studied in a quantum Hall regime. Anomalous longitudinal resistances and deviations of the Hall resistance from quantized values are interpreted as a consequence of non-equilibrium distribution in edge states. The results ar analyzed in terms of properties of contacts. © 1990.
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页码：224 / 228
页数：5
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