HIGH-FIELD COLLISION RATES IN POLAR SEMICONDUCTORS

被引：0

作者：

BARKER, JR ^{[1
]}

机构：

[1] UNIV WARWICK,COVENTRY CV4 7AL,WARWICKSHIRE,ENGLAND

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：709 / 709

页数：1

共 50 条

[1] HIGH-FIELD COLLISION RATES IN POLAR SEMICONDUCTORS
BARKER, JR
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 267 - 271
[2] REMARKS ON HIGH-FIELD COLLISION RATES IN POLAR SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (20): : L447 - L449
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[4] THEORY OF TRANSIENT HIGH-FIELD CONDUCTIVITY IN POLAR SEMICONDUCTORS
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[8] HIGH-FIELD EFFECTS IN DEGENERATE SEMICONDUCTORS - COLLISION INTEGRAL AND ISOTROPIC DISTRIBUTION FUNCTION
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[9] High-field effects in degenerate nonparabolic semiconductors: Collision integral and isotropic distribution function
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[10] APPLICATION OF A NEW HIGH-FIELD QUANTUM MAGNETO-TRANSPORT THEORY FOR POLAR SEMICONDUCTORS
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