MODELING OF PROTON-INDUCED SINGLE EVENT UPSET RATES

被引:0
|
作者
BION, T
BOURRIEAU, J
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:403 / 411
页数:9
相关论文
共 50 条
  • [1] Heavy ion and proton-induced single event multiple upset
    Reed, RA
    Carts, MA
    Marshall, PW
    Marshall, CJ
    Musseau, O
    McNulty, PJ
    Roth, DR
    Buchner, S
    Melinger, J
    Corbiere, T
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) : 2224 - 2229
  • [2] Heavy ion and proton-induced single event multiple upset
    Naval Research Lab, Washington, United States
    IEEE Trans Nucl Sci, 6 pt 1 (2224-2229):
  • [3] Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices
    Caron, P.
    Inguimbert, C.
    Artola, L.
    Ecoffet, R.
    Bezerra, F.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (07) : 1404 - 1409
  • [4] Proton-induced upset in SOI CMOS SRAMS
    Liu, ST
    Liu, HY
    Anthony, D
    Heikkila, W
    Hughes, H
    Campbell, A
    Petersen, EL
    McMarr, PJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3475 - 3479
  • [5] Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell
    叶兵
    刘杰
    王铁山
    刘天奇
    罗捷
    王斌
    殷亚楠
    姬庆刚
    胡培培
    孙友梅
    侯明东
    Chinese Physics B, 2017, (08) : 540 - 545
  • [6] Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell
    Ye, Bing
    Liu, Jie
    Wang, Tie-Shan
    Liu, Tian-Qi
    Luo, Jie
    Wang, Bin
    Yin, Ya-Nan
    Ji, Qing-Gang
    Hu, Pei-Pei
    Sun, You-Mei
    Hou, Ming-Dong
    CHINESE PHYSICS B, 2017, 26 (08)
  • [7] Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory
    Chen, Dakai
    Wilcox, Edward
    Ladbury, Raymond L.
    Seidleck, Christina
    Kim, Hak
    Phan, Anthony
    Label, Kenneth A.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (01) : 19 - 26
  • [8] Proton-Induced Single-Event Degradation in SDRAMs
    Rodriguez, Axel
    Wrobel, Frederic
    Samaras, Anne
    Bezerra, Francoise
    Vandevelde, Benjamin
    Ecoffet, Robert
    Touboul, Antoine
    Chatry, Nathalie
    Dilillo, Luigi
    Saigne, Frederic
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 63 (04) : 2115 - 2121
  • [9] PROTON-INDUCED SINGLE EVENT UPSETS IN NMOS MICROPROCESSORS
    SHAPIRO, P
    CAMPBELL, AB
    PETERSEN, EL
    MYERS, LT
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 2072 - 2075
  • [10] Proton induced single event upset in 6 T SOISRAMs
    Liu, Harry Y.
    Liu, Michael S.
    Hughes, Harold L.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3502 - 3505