ABRUPT DEGRADATION OF 3 TYPES OF SEMICONDUCTOR LIGHT-EMITTING-DIODES AT HIGH-TEMPERATURE

被引：14

|

作者：

UEDA, O

IMAI, H

FUJIWARA, T

YAMAKOSHI, S

SUGAWARA, T

YAMAOKA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.327445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5316 / 5325

页数：10

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