ORIGIN OF LOW-TEMPERATURE RESIDUAL ABSORPTION IN YBA2CU3OY

被引：19

作者：

SCHUTZMANN, J ^{[1
]}

TAJIMA, S ^{[1
]}

MIYAMOTO, S ^{[1
]}

SATO, Y ^{[1
]}

TERASAKI, I ^{[1
]}

机构：

[1] TOKAI UNIV,DEPT PHYS,HIRATSUKA,KANAGAWA 25911,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 04期

关键词：

HIGH-T-C SUPERCONDUCTORS; ELECTRONIC TRANSPORT; LIGHT ABSORPTION AND SCATTERING;

D O I：

10.1016/0038-1098(94)00908-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured the c axis reflectivity of over- and slightly underdoped YBa2Cu3Oy crystals. It was found that an additional free carrier-like contribution, observed in the low-temperature (T < T-c) conductivity of the fully oxygenated crystals, is characteristic for the overdoped state and disappears in the underdoped regime. The decrease of the penetration depth lambda(c) with increasing hole doping saturates in the overdoped regime. The related saturation of the superfluid density is compensated by an enhanced quasi particle density that is attributed to an intrinsic pair-breaking process.

引用

页码：293 / 297

页数：5

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