NONEQUILIBRIUM CHARGE CARRIER LIFETIME IN MNXHG1-XTE EPITAXIAL LAYERS

被引：0
|
作者：
BARYSHEV, NS
BEGOVATOV, VE
MEZENTSEVA, MP
TRIFONOVA, MM
AVERYANOV, IS
机构：
来源：
INORGANIC MATERIALS | 1991年 / 27卷 / 12期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2177 / 2180
页数：4
相关论文
共 50 条
  • [1] Laser assisted evaporation and deposition of MnxHg1-xTe epitaxial layers
    Kavych, V
    Mansurov, L
    Lozynska, M
    Pysarevskij, V
    FIFTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 2001, 4355 : 282 - 285
  • [2] PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN EPITAXIAL MNXHG1-XTE LAYERS AT LOW-TEMPERATURES
    GASANZADE, SG
    ZHADKO, IP
    ZINCHENKO, EA
    SOCHINSKII, NV
    SHEPELSKII, GA
    SEMICONDUCTORS, 1994, 28 (05) : 470 - 473
  • [3] INTRINSIC CARRIER DENSITY AND EFFECTIVE MASS OF ELECTRONS IN MNXHG1-XTE
    BODNARUK, OA
    GORBATYUK, IN
    OSTAPOV, SE
    RARENKO, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 264 - 266
  • [4] Preparation and properties of MnxHg1-xTe
    Paranchich, SY
    Paranchich, LD
    Makogonenko, VN
    Andriichuk, MD
    Romanyuk, VR
    Ivonyak, YI
    Sinilo, SV
    INORGANIC MATERIALS, 2005, 41 (12) : 1280 - 1282
  • [5] PRODUCTION AND SOME PROPERTIES OF EPITAXIAL LAYERS OF SYSTEMS MNXHG1-XTE, CDXMNYHG1-X-YTE
    GEORGITSE, YI
    IVANOVOMSKII, VI
    MIRONOV, KY
    UNTILA, PG
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1990, 33 (03): : 96 - 97
  • [6] Refractive Index of MnxHg1-xTe Single Crystals
    Nesmelova, I. M.
    Lavrent'eva, I. M.
    Baryshev, N. S.
    Tsitsina, N. P.
    Journal of Applied Spectroscopy, 1996, 63 (03)
  • [7] Effective electron mass in a MnxHg1-xTe system
    Nesmelova, IM
    SEMICONDUCTORS, 2003, 37 (11) : 1257 - 1258
  • [8] Investigation of MIS-structures on MnxHg1-xTe
    Lanskaya, OG
    Lilenko, EP
    Voitsekhovskii, AV
    Kalenik, VI
    MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1997, 3182 : 111 - 114
  • [9] EXPERIMENTAL-OBSERVATION OF THERMAL OSCILLATIONS OF THE RESISTANCE IN MNXHG1-XTE
    BODNARUK, OA
    GORBATYUK, IN
    ZOLOTAREV, SV
    PUSTYLNIK, OD
    RARENKO, IM
    TALYANSKII, EB
    JETP LETTERS, 1985, 41 (11) : 565 - 568
  • [10] Low-temperature photoelectric characteristics of MnxHg1-xTe
    Gasanzade, SG
    Kalenik, VI
    Shepelskii, GA
    SEMICONDUCTORS, 1996, 30 (01) : 34 - 38
12345