Free Carrier Distribution Criterion in Quantum Dot Lasers

被引:1
|
作者
Shahid, Hifsa [1 ]
机构
[1] Univ Engn & Technol, Dept Elect Engn, Kala Shah Kakoo Campus, Lahore, Pakistan
关键词
Quantum Dot Laser; Spontaneous Emission; Gain; Thermal;
D O I
10.22581/muet1982.1603.01
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spontaneous emission spectra of a 1.28 mu m InAs/GaAs QD (Quantum Dot) Fabry-Perot laser device has been measured under continuous wave operation at a fixed junction temperature of 300K. At low carrier densities, empirically observed static peak wavelength position and a fixed spectral shape of the spontaneous emission spectra are indicative of the random-like population distribution rather than a global Fermi level in the system. A theoretical model based on the Monte-Carlo method has been shown to have good agreement with the empirical results. In addition the evolutions of spontaneous emission spectral shapes are also explained in terms of many body effects.
引用
收藏
页码:309 / 316
页数:8
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