K-BAND DIELECTRIC RESONATOR OSCILLATOR USING A GAINP/GAAS HBT

被引：0

作者：

GUTTICH, U

LEIER, H

MARTEN, A

RIEPE, K

PLETSCHEN, W

BACHEM, KH

机构：

[1] DAIMLER BENZ AG,RES CTR ULM,W-7900 ULM,GERMANY

[2] FRAUNHOFER INST ANGEW FESTKORPERFORSCH,W-7800 FREIBURG,GERMANY

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design, fabrication and performance of the first hybrid dielectric resonator oscillator (DRO) using a GaInP/GaAs HBT as active device are described. The oscillator consists of a microstrip circuit realized on alumina substrate. The HBT has an emitter area of 1.5 mu m x 20 mu m and a selfaligned base contact. The vertical layer structure of the HBT incorporates a highly carbon doped base and a thin GaInP blocking layer. The fabricated oscillator exhibits an output power of +5 dBm at 21 GHz with a conversion efficiency of 13%. The phase noise has been measured to be -102.5 dBc/Hz at 100 kHz and -81.6 dBc/Hz at 10 kHz off carrier, respectively

引用

页码：15 / 20

页数：6

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