H-1 NUCLEAR-MAGNETIC-RESONANCE OF THERMALLY GROWN SILICON DIOXIDE FILMS

H-1 NMR spectra were obtained for silicon dioxide films that were thermally grown under clean room conditions. Bulk hydrogen in a concentration of approximately 1.2 X 10(19) H/cm3 was detected in a 1.1-mum thick wet oxide grown at 1000-degrees-C. The relatively long (approximately 15 s) spin-lattice relaxation time f or this sample is consistent with bulk hydrogen, while a narrow 3 kHz half-width at half maximum (HWHM) Gaussian line shape suggests that the majority of hydrogen in this film is well isolated. Thinner thermal oxides, grown under a variety of conditions, were exposed to the ambient to assess the effects of sample aging. These samples exhibit a 6 kHz HWHM Lorentzian line and relaxation times <1 s, indicative of hydrogen on SiO2 surfaces.