CRITERION FOR DETERMINING THE SWITCHING VOLTAGE OF A METAL-THIN INSULATOR-SI(N)-SI(P+) DEVICE

被引：6

作者：

MILLAN, J ^{[1
]}

SERRAMESTRES, F ^{[1
]}

BUXO, J ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 11期

关键词：

D O I：

10.1051/rphysap:019790014011092100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：921 / 925

页数：5

共 50 条

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[10] SWITCHING AND NONVOLATILE MEMORY MECHANISM IN A P+-SI-SIO2-SNO2-METAL HETEROSTRUCTURE WITH A TUNNELING THIN INSULATOR
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