LUMINESCENCE OF ZNXMG1-XSE LAYERS OBTAINED BY THERMAL-DIFFUSION OF MG INTO ZNSE AND ZNXMG1-XSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引:0
|
作者
BALA, W
FIRSZT, F
GLOWACKI, G
GAPINSKI, A
DZIK, J
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This work deals with the study of photoluminescence properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on (001) GaAs and (111) ZnTe substrates and ZnxMg1-xSe layers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of ZnxMg1-xSe lasers are dominated by blue and violet emission bands with maxima positioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2.81 eV and 2.705 eV, depending on preparation conditions. In some samples the blue luminescence is observed up to room temperature.
引用
收藏
页码:161 / 164
页数:4
相关论文
共 50 条
  • [2] Electrical and optical properties of ZnxMg1-xSe/ZnTe and ZnxMg1-xSe/GaAs heterojunctions
    Bala, W
    Glowacki, G
    Gapinski, A
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 111 - 114
  • [3] DEPENDENCE OF EXCITON LINEWIDTH ON THE COMPOSITION OF ZNXMG1-XSE LAYERS GROWN BY MBE
    BALA, W
    GLOWACKI, G
    GAPINSKI, A
    ACTA PHYSICA POLONICA A, 1995, 88 (04) : 667 - 670
  • [5] Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBE
    Bala, W
    Glowacki, G
    Gapinski, A
    SOLID STATE CRYSTALS IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1997, 3179 : 141 - 146
  • [6] Molecular-beam epitaxy of ZnxBe1-xSe layers on vicinal Si(001) substrates
    Chauvet, C
    Guénaud, C
    Vennégués, P
    Tournié, E
    Faurie, JP
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 514 - 517
  • [7] Lattice vibration of ZnSe1-xTex epilayers grown by molecular-beam epitaxy
    Yang, CS
    Chou, WC
    Chen, DM
    Ro, CS
    Shen, JL
    Yang, TR
    PHYSICAL REVIEW B, 1999, 59 (12): : 8128 - 8131
  • [8] Molecular-beam epitaxy of ZnxBe1-xSe layers on vicinal Si(0 0 1) substrates
    Chauvet, C.
    Guénaud, C.
    Vennéguès, P.
    Tournié, E.
    Faurie, J.P.
    Journal of Crystal Growth, 1999, 201 : 514 - 517
  • [9] Reduction of inhomogeneous broadening of exciton luminescence in CdxZn1-xSe ternary alloys and CdxZn1-xSe-ZnSe multiple quantum wells grown by molecular-beam epitaxy under Se-excess supply
    Fujmoto, M
    Shigematsu, H
    Senda, K
    Yoshikawa, M
    Kubo, H
    Yamada, Y
    Taguchi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A): : 3550 - 3555
  • [10] Cubic ZnxMg1-xO thin films grown by plasma-assisted molecular-beam epitaxy for optoelectronic applications
    Mares, J. W.
    Boutwell, R. C.
    Scheurer, A.
    Schoenfeld, W. V.
    JOURNAL OF MATERIALS RESEARCH, 2010, 25 (06) : 1072 - 1079