CHARACTERISTICS OF THE HALL-EFFECT AND OF THE ABSORPTION-SPECTRA OF STRONGLY COMPENSATED LEAD CHALCOGENIDES

被引:0
|
作者
VEIS, AN
KAIDANOV, VI
KRUPITSKAYA, RY
MELNIK, RB
NEMOV, SA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 12期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1392 / 1396
页数:5
相关论文
共 50 条
  • [1] EFFECT OF SURFACE-TREATMENT ON THE ABSORPTION-SPECTRA OF LEAD-TIN CHALCOGENIDES
    PETROVA, OA
    NESMELOVA, IM
    KHARINOVSKII, YS
    PYREGOV, BP
    SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1988, 55 (04): : 257 - 258
  • [2] EFFECT OF 2ND-PHASE IMPREGNATIONS ON THE ABSORPTION-SPECTRA OF LEAD TIN CHALCOGENIDES
    PETROVA, OA
    NESMELOVA, IM
    BARYSHEV, NS
    AVERYANOV, IS
    INORGANIC MATERIALS, 1989, 25 (06) : 880 - 882
  • [3] IMPURITY ABSORPTION-SPECTRA OF COMPENSATED INSB
    VALYASHKO, EG
    PLESKACHEVA, TB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 573 - 574
  • [4] DIFFUSION HALL-EFFECT IN COMPENSATED METALS
    YOSHIDA, K
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1986, 47 (06) : 581 - 585
  • [5] INVESTIGATION OF THE HALL-EFFECT IN MOLTEN SILVER CHALCOGENIDES
    GLAZOV, VM
    AIVAZOV, AA
    GAFOROV, S
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 594 - 595
  • [6] ELECTRONIC ABSORPTION-SPECTRA OF LEAD IODIDE
    GOBINATHAN, R
    HARIHARAN, K
    RAMASAMY, P
    CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (12) : 1435 - 1438
  • [7] INVESTIGATION OF THE HALL-EFFECT IN SOLID AND LIQUID COPPER CHALCOGENIDES
    GLAZOV, VM
    MAMEDOV, SM
    BURKHANOV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (11): : 1218 - 1221
  • [8] ANOMALOUS HALL-EFFECT IN EUROPIUM CHALCOGENIDES - IMPURITY SCATTERING
    SINKKONEN, J
    COMMENTATIONES PHYSICO-MATHEMATICAE, 1977, 47 (03): : 67 - 75
  • [9] ELECTRICAL CONDUCTIVITY AND HALL-EFFECT AT LOW-TEMPERATURES IN STRONGLY COMPENSATED N-TYPE INSB
    YAREMENKO, NG
    POTAPOV, VT
    IVLEVA, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1084 - 1091
  • [10] HALL-EFFECT IN COMPENSATED N-TYPE GE
    BARANSKII, PI
    BAIDAKOV, VV
    DAKHOVSKII, IV
    SEITOV, EP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 696 - 697