INFLUENCE OF DEVIATION OF THE COMPOSITION OF CDXHG1-XTE (X ALMOST-EQUAL-TO O.2) CRYSTALS FROM STOICHIOMETRY ON THE RATE OF DIFFUSION OF HG

被引：0

|

作者：

BOGOBOYASHCHII, VV

ELIZAROV, AI

IVANOVOMSKII, VI

PETRYAKOV, VA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：888 / 889

页数：2

相关论文

共 5 条

[1] ELECTRICAL-PROPERTIES OF CDXHG1-XTE CRYSTALS WITH X ALMOST-EQUAL-TO 0.3
SOBOLEV, DV
PONOMARENKO, VP
BOVINA, LA
STAFEEV, VI
KURBANOV, KR
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 747 - 748
[2] PLASTIC BEHAVIOR OF CDXHG1-XTE (O LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) CRYSTALS
BARBOT, JF
RIVAUD, G
GAREM, H
BLANCHARD, C
DESOYER, JC
LESCOUL, D
DESSUS, JL
DURAND, A
JOURNAL OF MATERIALS SCIENCE, 1990, 25 (03) : 1877 - 1885
[3] TELLURIUM PRECIPITATE INFLUENCE ON THE ELECTRON HALL-MOBILITY IN HG1-XCDXTE(X ALMOST-EQUAL-TO 0.2) CRYSTALS
ARAPOV, YG
DAVYDOV, AB
ZVEREVA, ML
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 92 (01): : K81 - &
[4] INFLUENCE OF ANNEALING UNDER AN ANODIC OXIDE ON CHANGES IN THE COMPOSITION OF THE SURFACE AND CONVERSION OF THE TYPE OF CONDUCTION OF P-TYPE CDXHG1-XTE(X-APPROXIMATE-TO-0.2) SINGLE-CRYSTALS
TALIPOV, NK
POPOV, VP
REMESNIK, VG
NALKINA, ZA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (02): : 175 - 179
[5] INFLUENCE OF HEAT-TREATMENT ON THE PHASE-TRANSITION TEMPERATURE IN SINGLE-CRYSTALS OF HG1-XZNXCR2SE4 SOLID-SOLUTIONS (O LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.14)
FILATOV, AV
LEVSHIN, VA
NOVOTORTSEV, VM
KOVALEVA, IS
KALINNIKOV, VT
INORGANIC MATERIALS, 1982, 18 (04) : 598 - 599