ATOMIC-STRUCTURE OF THE METASTABLE C(4X4) RECONSTRUCTION OF SI(100)

被引:81
|
作者
UHRBERG, RIG [1 ]
NORTHRUP, JE [1 ]
BIEGELSEN, DK [1 ]
BRINGANS, RD [1 ]
SWARTZ, LE [1 ]
机构
[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 16期
关键词
D O I
10.1103/PhysRevB.46.10251
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A c (4 X 4) reconstruction can be formed on the clean Si(100) surface by special surface treatment techniques. We have studied the atomic structure of this metastable phase, which is prepared by hydrogen exposure and annealing, using scanning tunneling microscopy and first-principles total-energy calculations. A new model is derived which has two types of surface dimers oriented parallel and perpendicular to the underlying 2 X 1 dimer rows. Our results are thus in disagreement with the missing dimer model which has earlier been proposed in the literature.
引用
收藏
页码:10251 / 10256
页数:6
相关论文
共 50 条
  • [1] FORMATION AND ATOMIC CONFIGURATION OF SI(100)C(4X4) STRUCTURE
    KATO, K
    IDE, T
    NISHIMORI, T
    ICHINOKAWA, T
    SURFACE SCIENCE, 1988, 207 (01) : 177 - 185
  • [2] SI(100)-C(4X4) METASTABLE SURFACE OBSERVED BY SCANNING TUNNELING MICROSCOPY
    IDE, T
    MIZUTANI, T
    PHYSICAL REVIEW B, 1992, 45 (03): : 1447 - 1449
  • [3] Modeling of the carbon-rich c(4x4) reconstruction on Si(100)
    Remediakis, IN
    Guedj, C
    Kelires, PC
    Grützmacher, D
    Kaxiras, E
    SURFACE SCIENCE, 2004, 554 (2-3) : 90 - 102
  • [4] STRUCTURAL MODEL OF SI(100)-C(4X4)
    WANG, HC
    LIN, RF
    WANG, X
    PHYSICAL REVIEW B, 1987, 36 (14): : 7712 - 7714
  • [5] ATOMIC-STRUCTURE OF THE SI(001)C(4X2) SURFACE
    ZHAO, RG
    YANG, WS
    PHYSICAL REVIEW B, 1986, 33 (10): : 6780 - 6784
  • [6] Atomic structure of the InSb(001)-c(4x4) reconstruction determined by X-ray diffraction
    Jones, N
    Norris, C
    Nicklin, CL
    Steadman, P
    Taylor, JSG
    Johnson, AD
    McConville, CF
    SURFACE SCIENCE, 1998, 398 (1-2) : 105 - 116
  • [7] Observations regarding a c(4x4)C-Si(100) surface
    Shek, ML
    SURFACE SCIENCE, 1998, 414 (03) : 353 - 362
  • [8] Is the c(4x4) reconstruction of Si(001) associated with the presence of carbon?
    Miki, K
    Sakamoto, K
    Sakamoto, T
    APPLIED PHYSICS LETTERS, 1997, 71 (22) : 3266 - 3268
  • [9] STM study of the C-induced Si(100)-c(4X4) reconstruction -: art. no. 115321
    Jemander, ST
    Zhang, HM
    Uhrberg, RIG
    Hansson, GV
    PHYSICAL REVIEW B, 2002, 65 (11): : 1 - 8
  • [10] Scanning tunnelling microscopy study of Si(100)-c(4x4) structure formation by annealing of Si epitaxial films
    Zhang, Z
    Kulakov, MA
    Bullemer, B
    SURFACE SCIENCE, 1996, 369 (1-3) : 69 - 75