alpha-BiFeO3;
Electronic structure;
Optical Properties;
mBJ;
LDA plus U;
D O I:
暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The electronic structures and optical properties of hexagonal (R3c), triclinic (P1), and monoclinic (R3) structures of the strongly correlated alpha-BiFeO3 (BFO) systems are presented by adopting a full-potential linearized augmented plane-wave method. For an accurate bandgap, the exchange-correlation functional called the corrected local density of Hubbard (LDA +..) method and modified Becke-Johnson (mBJ) exchange potential are used. We performed several theoretical calculations to investigate the electronic and optical properties of BFO with the R3c space group only. Therefore, this study focuses on elucidating the physical properties of other space groups such as.. 1 and..3 of BFO. This study obtained indirect bandgaps of 2.24 and 2.55 eV for R3c, 2.3 and 2.5 eV for P1, and 2.15 and 2.45 eV for R3 obtained by LDA + U and mBJ methods, respectively. Only the direct bandgap (2.44 eV) for R3c, acquired by the LDA + U, perfectly matches the experimental absorption measurement of single-crystal BFO (2.4 eV). For the mBJ potential, for all BFO structure types, the direct bandgaps are slightly larger than the indirect bandgaps. The LDA + U spectrum features of the imaginary part of the dielectric function for the hexagonal and triclinic structure types are in better agreement with the experimental findings than those of the mBJ method. Although the BFO structures have indirect and direct bandgaps, the direct optical absorption of the LDA + U was not significant for the R3 structure. Although the mBJ method is highly efficient compared to the most accurate GW method, it is time-consuming compared to the LDA + U method. Therefore, LDA + U is considered inexpensive and more reliable than mBJ in better understanding optoelectronic properties. It is, therefore, preferable to use the LDA + U method for BFO electronic structural calculations to reduce the calculation time and obtain a better description of the bandgaps and some physical properties, particularly optical properties.
机构:
Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
Wang, Fengqi
Lv, Shiyi
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机构:
Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
Lv, Shiyi
Fu, Chunlin
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机构:
Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
Fu, Chunlin
Zhang, Chaoyang
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机构:
CAEP, Inst Chem Mat, Mianyang, Sichuan, Peoples R ChinaChongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Wang, Hai
Zheng, Yue
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机构:
Hong Kong Polytech Univ, Elect & Informat Engn Dept, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Zheng, Yue
Cai, Meng-Qiu
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机构:
Hunan Univ, Sch Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China
Hunan Univ, Micronanotechnol Res Ctr, Changsha 410082, Hunan, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Cai, Meng-Qiu
Huang, Haitao
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机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Huang, Haitao
Chan, Helen L. W.
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机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China