SCATTERING MECHANISMS IN HEAVILY DOPED SEMICONDUCTORS .1. MAXIMA IN RESISTIVITY AND HALL-COEFFICIENT

被引：29

|

作者：

SASO, T

KASUYA, T

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1980年 / 48卷 / 05期

关键词：

D O I：

10.1143/JPSJ.48.1566

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：1566 / 1575

页数：10

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