UNUSUALLY LOW RESISTIVITY OF COPPER-GERMANIDE THIN-FILMS FORMED AT LOW-TEMPERATURES

被引：71
|
作者：
KRUSINELBAUM, L
ABOELFOTOH, MO
机构：
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 12期
关键词：
D O I：
10.1063/1.104304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200-degrees-C. At these low temperatures, the epsilon-Cu3Ge phase with a monoclinic crystal structure is formed, with room-temperature resistivity which can be as low as 5.5-mu-OMEGA cm. The films are electrically stable up to at least 600-degrees-C, and, unlike pure copper, are also stable against oxygen and air exposure.
引用
收藏
页码：1341 / 1343
页数：3
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