LINEARIZED DIFFERENTIAL TRANSCONDUCTORS IN SUBTHRESHOLD CMOS

被引：51
|
作者：
FURTH, PM
ANDREOU, AG
机构：
[1] Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 07期
关键词：
CMOS INTEGRATED CIRCUITS; LINEARIZATION TECHNIQUES; TRANSCONDUCTORS;
D O I：
10.1049/el:19950376
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three schemes for linearising the transconductance of the basic differential pair in subthreshold CMOS are examined: (i) multiple asymmetric differential pairs, (ii) Source degeneration via symmetric diffusers, and (iii) source degeneration via a single diffuser. Using a maximally flat optimising criterion, the linear range of the basic differential pair can be increased by 4-8 times.
引用
收藏
页码：545 / 547
页数：3
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