THE MONTE-CARLO METHOD FOR SEMICONDUCTOR-DEVICE AND PROCESS MODELING

被引：8
|
作者：
LUGLI, P
机构：
[1] Dipartimento di Ingegneria Meccanica, 00173 Roma
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1990年 / 9卷 / 11期
关键词：
D O I：
10.1109/43.62753
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A critical review of the Monte Carlo (MC) simulation as applied to semiconductor device and process modeling is presented. The general method is discussed and some special features that can be very useful in particular situations are examined. It is shown that the MC method is a mature technique for modeling, and can offer great advantages over more traditional approaches. Critical points are pointed out and analyzed. A variety of applications are then outlined. © 1990 IEEE
引用
收藏
页码：1164 / 1176
页数：13
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