TRANSMISSION ELECTRON-MICROSCOPY STUDY OF CHEMICAL-VAPOR-DEPOSITED DIAMOND BY A SIDE-VIEW METHOD

被引：7
|
作者：
GOTO, Y
KURIHARA, K
SAWAMOTO, Y
KITAKOHJI, T
机构：
[1] Fujitsu Laboratories, Ltd., Atsugi 243-01
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期
关键词：
D O I：
10.1063/1.106982
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The initial growth of synthetic diamond by dc plasma-jet chemical vapor deposition was studied with a transmission electron microscope by a side-view method. Both diamond particles and beta-SiC particles were observed on the Si substrate. Si atoms in the substrate were etched clearly by the plasma jet except beneath diamond particles.
引用
收藏
页码：172 / 174
页数：3
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