PASSIVATION MECHANISMS FOR GAAS STUDIED WITH X-RAY PHOTO-ELECTRON SPECTROSCOPY

被引：0

作者：

HECHT, MH ^{[1
]}

GRUNTHANER, PJ ^{[1
]}

LAWSON, D ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

MASERJIAN, J ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：319 / 319

页数：1

共 50 条

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