GROWTH INVESTIGATIONS OF 1.3 MU-M GAINASP/INP MQW LASER-DIODES GROWN BY CHEMICAL BEAM EPITAXY

被引：6
|
作者：
MEIER, HP
BROOM, RF
EPPERLEIN, PW
HAUSSER, S
JAKUBOWICZ, A
WALTER, W
机构：
[1] IBM Research Division, Zurich Research Laboratory
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90597-P
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 mum. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density J(th) as 160 A/cm2 and an internal loss of 5 cm-1 were obtained.
引用
收藏
页码：165 / 168
页数：4
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