EFFECT OF ELECTRON-IRRADIATION ON DARK AND PHOTOCONDUCTIVITY OF AMORPHOUS HYDROGENATED SILICON

被引：9

作者：

NAVKHANDEWALA, RV ^{[1
]}

NARASIMHAN, KL ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.24.7443

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7443 / 7446

页数：4

共 50 条

[1] INFLUENCE OF ELECTRON-IRRADIATION ON THE PHOTOCONDUCTIVITY OF AMORPHOUS HYDROGENATED SILICON
KAZANSKII, AG
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CHUKICHEV, MV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1000 - 1002
[2] ELECTRON-IRRADIATION IN AMORPHOUS HYDROGENATED SILICON
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GUHA, S
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 803 - 806
[3] ELECTRON-IRRADIATION IN AMORPHOUS SILICON
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GUHA, S
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (22): : L625 - L627
[4] PHOTOCONDUCTIVITY AND DARK CONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1983, 47 (07) : 573 - 576
[5] The effect of illumination on dark conductivity and photoconductivity of hydrogenated amorphous silicon layered films
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[J]. MOSCOW UNIVERSITY PHYSICS BULLETIN, 2009, 64 (05) : 527 - 531
[6] The effect of illumination on dark conductivity and photoconductivity of hydrogenated amorphous silicon layered films
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N. N. Ormont
[J]. Moscow University Physics Bulletin, 2009, 64 : 527 - 531
[7] Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon
Suezawa, M
[J]. PHYSICAL REVIEW B, 2001, 63 (03)
[8] PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
ABELSON, J
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 450 - 452
[9] PHOTOCONDUCTIVITY SPECTRUM OF AMORPHOUS HYDROGENATED SILICON
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 112 - 113
[10] TRANSIENT PHOTOCONDUCTIVITY OF AMORPHOUS HYDROGENATED SILICON
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1415 - 1416

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