EFFECTS OF POTENTIAL FLUCTUATIONS IN QUANTUM-DOT ON COULOMB OSCILLATION

被引：6
|
作者：
ISAWA, Y
机构：
[1] Department of Physical Electronics, Faculty of Engineering, Hiroshima University, Higashihiroshima 724
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1995年 / 64卷 / 01期
关键词：
D O I：
10.1143/JPSJ.64.14
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report how the conductance oscillations are varied when there are potential fluctuations in the semiconductor quantum dot. We find that the potential fluctuations lead to an irregular and a nonmonotonic change of the peak heights as a function of the gate voltage and each one increases or decreases as a function of temperature from peak to peak. The details are sensitive to the change of the randomness in the potential. We show that these anomalous features, although they differ from device to device, are observed universally when the fabrication is not complete.
引用
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页码：14 / 18
页数：5
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