INTEGRATED SILICON MAGNETOTRANSISTORS - HIGH-SENSITIVITY OR HIGH-RESOLUTION

被引：3

作者：

NATHAN, A ^{[1
]}

BALTES, HP ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,PHYS ELECTR LAB,CH-8093 ZURICH,SWITZERLAND

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 22卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(89)80077-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise measurements performed for various magnetotransistor (MT) structures show that MTs with a high current gain, βF ≫1 (and conversely very low magnetic sensitivities, ΔIc/(ICB) < 0.1/T) exhibit the unique feature of a strong positive correlation in the collector noise voltages. Consequently, very large signal-to-noise ratios are obtained, resulting in high resolution over large bandwidths (Bmin < 20μT over 100 kHz), at low device operating current, IC < 1 mA. On the other hand, MTs with extremely large sensitivity, ΔIC/ (ICB) > 10/T (βF ≪ 1) and nominally operating at large device currents (Itotal ∼ 8 - 10 mA), lose this unique correlation property, resulting in large output noise and a field resolution that could be inferior in comparison. Pertinent examples are provided that illustrate these findings. © 1990.

引用

页码：780 / 785

页数：6

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