共 50 条
- [1] INFLUENCE OF PLASTIC-DEFORMATION ON THE ELECTRICAL-CONDUCTIVITY OF N-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1254 - 1257
- [2] INFLUENCE OF CONCENTRATION OF DONORS AND ACCEPTORS ON ELECTRICAL CONDUCTIVITY OF HEAVILY DOPED N-TYPE SILICON SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (11): : 2580 - +
- [4] ANISOTROPY OF CONDUCTIVITY IN RANTE OF WARM ELECTRONS FOR HIGH-DOPED N-TYPE GERMANIUM AND N-TYPE SILICON ACTA PHYSICA AUSTRIACA, 1971, 33 (01): : 42 - +
- [7] INFLUENCE OF TRAPPING EFFECTS ON PHOTOCONDUCTIVITY SPECTRA OF N-TYPE SILICON IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 916 - 917
- [8] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE PHYSICAL REVIEW, 1966, 152 (02): : 785 - +
- [9] DYNAMICAL ELECTRICAL-CONDUCTIVITY OF N-TYPE PBTE PHYSICAL REVIEW B, 1983, 28 (10): : 6079 - 6082