1ST-PRINCIPLES CALCULATIONS OF THE ELECTRONIC-PROPERTIES OF SILICON QUANTUM WIRES

被引：387

作者：

READ, AJ ^{[1
]}

NEEDS, RJ ^{[1
]}

NASH, KJ ^{[1
]}

CANHAM, LT ^{[1
]}

CALCOTT, PDJ ^{[1
]}

QTEISH, A ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,DEF RES AGCY MALVERN,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.69.1232

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have performed first-principles pseudopotential calculations for H-terminated Si wires with thicknesses from 12 to 23 angstrom, calculating the band gaps and optical matrix elements. Comparison with effective-mass theory shows that the latter is valid for wires wider than 23 angstrom. We have used our data to analyze the luminescent properties of highly porous Si fabricated by electrochemical etching of Si wafers in HF-based solutions.

引用

页码：1232 / 1235

页数：4

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