BREAKDOWN VOLTAGE IMPROVEMENT FOR THIN-FILM SOI POWER MOSFETS BY A BURIED OXIDE STEP STRUCTURE

被引：44
|
作者：
KIM, IJ
MATSUMOTO, S
SAKAI, T
YACHI, T
机构：
[1] NTT Interdisciplinary Research Laboratories, Tokyo 180, 3-9-11 Midori-cho, Musashino-shi
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 05期
关键词：
D O I：
10.1109/55.291590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Numerical simulations are performed to demonstrate that a new SOI power MOSFET structure, namely buried oxide step structure (BOSS), introduces a high electric field peak near the buried oxide step and that this peak reduces the height of the other electric field peaks within thin silicon layer. The relaxation of these peaks results in higher breakdown voltages at much higher impurity concentrations than those in the conventional structure.
引用
收藏
页码：148 / 150
页数：3
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