ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON

被引：32
|
作者：
BROWER, KL
VOOK, FL
BORDERS, JA
机构：
来源：
APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 07期
关键词：
D O I：
10.1063/1.1652970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：208 / &
相关论文
共 50 条
  • [1] ELECTRON PARAMAGNETIC RESONANCE IN ION-IMPLANTED SILICON
    DALY, DF
    PICKAR, KA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (11) : C375 - &
  • [2] ELECTRON PARAMAGNETIC RESONANCE OF ION-IMPLANTED DONORS IN SILICON
    BROWER, KL
    BORDERS, JA
    [J]. APPLIED PHYSICS LETTERS, 1970, 16 (04) : 169 - &
  • [3] ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICON
    DALY, DF
    PICKAR, KA
    [J]. APPLIED PHYSICS LETTERS, 1969, 15 (08) : 267 - &
  • [4] Electron paramagnetic resonance study of ion-implanted photorefractive crystals
    Darwish, A
    Ila, D
    Willams, EK
    Poker, DB
    Hensley, DK
    [J]. ATOMISTIC MECHANISMS IN BEAM SYNTHESIS AND IRRADIATION OF MATERIALS, 1998, 504 : 369 - 374
  • [5] OBSERVATION OF DEFECTS IN ION-IMPLANTED SILICON
    SADANA, DK
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C328 - C328
  • [6] IDENTITY OF DEFECTS IN ION-IMPLANTED SILICON
    BROWER, KL
    VOOK, FL
    STEIN, HJ
    BORDERS, JA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (11) : C375 - &
  • [7] EPR OF DEFECTS IN ION-IMPLANTED SILICON
    BROWER, KL
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (05): : 682 - &
  • [8] DEFECTS AND AMORPHIZATION IN ION-IMPLANTED SILICON
    GYULAI, J
    REVESZ, P
    ZSOLDOS, L
    VERTESI, G
    GYIMESI, J
    [J]. ACTA PHYSICA ET CHEMICA, 1974, 20 (03): : 259 - 266
  • [9] On the formation of paramagnetic defects in ion-implanted fluoroaluminate glasses
    Bogomolova, LD
    Teplyakov, YG
    Jachkin, VA
    Bogdanov, VL
    Khalilev, VD
    Caccavale, F
    LoRusso, S
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 202 (1-2) : 178 - 184
  • [10] Rapid migration of defects in ion-implanted silicon
    Lalita, J
    Pellegrino, P
    Hallen, A
    Svensson, BG
    [J]. DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 239 - 244
12345