RADIATIVE RECOMBINATION OF DONOR-ACCEPTOR PAIRS IN POLAR SEMICONDUCTORS

被引：21

作者：

KARTHEUSER, E ^{[1
]}

EVRARD, R ^{[1
]}

WILLIAMS, F ^{[1
]}

机构：

[1] UNIV DELAWARE,NEWARK,DE 19711

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.21.648

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：648 / 658

页数：11

共 50 条

[1] RADIATIVE RECOMBINATION RATE OF DONOR-ACCEPTOR PAIRS
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[J]. CANADIAN JOURNAL OF PHYSICS, 1969, 47 (18) : 1971 - &
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[3] DONOR-ACCEPTOR PAIRS IN SEMICONDUCTORS
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[J]. PHYSICA STATUS SOLIDI, 1968, 25 (02): : 493 - &
[4] THEORY OF DONOR-ACCEPTOR RADIATIVE AND AUGER RECOMBINATION IN SIMPLE SEMICONDUCTORS
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[6] ELECTRON-PHONON COUPLING WITH DONOR-ACCEPTOR PAIR RECOMBINATION IN POLAR SEMICONDUCTORS
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[J]. SOLID STATE COMMUNICATIONS, 1982, 43 (07) : 495 - 498
[7] EXCITATION AND RECOMBINATION OF DONOR-ACCEPTOR PAIRS IN ZNTE
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[8] RECOMBINATION OF DONOR-ACCEPTOR PAIRS IN MIXED CRYSTALS
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[9] IMPURITY INTERACTION AND THE DONOR-ACCEPTOR RECOMBINATION IN SEMICONDUCTORS
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