ELECTRONIC-STRUCTURE OF THE SI/GAP(110) INTERFACE

被引：10
|
作者：
NILES, DW
HOCHST, H
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.39.7769
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7769 / 7775
页数：7
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