SPACE-CHARGE EFFECTS IN SIMOX BURIED OXIDES

被引：18
|
作者：
HERVE, D
PAILLET, P
LERAY, JL
机构：
[1] CEA, Centre d'Etudes de Bruyères-Le-Châtel, Bruyères-Le-Châtel, B.P. 12
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 03期
关键词：
D O I：
10.1109/23.299786
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
X-ray induced charge trapping in SIMOX buried oxides is investigated. Dose and applied field dependence is modeled by taking into account internal space charge effects due to hole and electron trapping. Oxide trapped charge measured via etch-back experiments on SIMOX MOS capacitor structures reveals a good agreement with numerical simulations. However, the model is no longer valid when applied to previous data obtained on irradiated back-channel transistors where enhanced electron trapping had been observed. Possible implication of this discrepancy on SIMOX electron trap nature is discussed.
引用
收藏
页码：466 / 472
页数：7
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