PHOTO-ASSISTED DIRECT WRITING OF CONDUCTING ALUMINUM

被引：3
|
作者：
HWANG, SD
BYUN, DJ
GLASS, JA
ROBERTSON, B
SPENCER, JT
DATTA, S
DOWBEN, PA
机构：
[1] SYRACUSE UNIV,WM KECK CTR MOLEC ELECTR,SYRACUSE,NY 13244
[2] UNIV NEBRASKA,CTR MAT RES & ANAL,LINCOLN,NE 68588
[3] SYRACUSE UNIV,DEPT CHEM,SYRACUSE,NY 13244
[4] UNIV NEBRASKA,CENT FACIL ELECTRON MICROSCOPY,DEPT MECH ENGN,LINCOLN,NE 68588
[5] IBM CORP,ENDICOTT,NY 13760
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 30卷 / 01期
基金：
美国国家科学基金会;
关键词：
ALUMINUM; CHEMICAL VAPOR DEPOSITION; PHOTOLYSIS; TMAA;
D O I：
10.1016/0921-5107(94)01140-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have succeeded in selective area deposition of aluminum films by ultraviolet photolytic decomposition of the orqanometallic complex trimethylamine alane, TMAA-AlH3(N(CH3)(3))(2). Both ultraviolet and visible light successfully photolysed the alane adduct and resulted in selective area deposition. The light sources exhibited different laser fragmentation mass spectra, suggesting somewhat different decomposition pathways.
引用
收藏
页码：L5 / L8
页数：4
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