首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
NUMERICAL STUDY OF AN ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR - EMITTER DESIGN AND COMPOSITIONAL GRADING
被引:10
|
作者
:
MEYYAPPAN, M
论文数:
0
引用数:
0
h-index:
0
MEYYAPPAN, M
ANDREWS, G
论文数:
0
引用数:
0
h-index:
0
ANDREWS, G
GRUBIN, HL
论文数:
0
引用数:
0
h-index:
0
GRUBIN, HL
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1988年
/ 31卷
/ 11期
关键词
:
D O I
:
10.1016/0038-1101(88)90008-1
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1611 / 1618
页数:8
相关论文
共 50 条
[1]
AN ALGAAS/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR
WU, X
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Sciences Laboratories, Columbia University, New York
WU, X
WANG, YQ
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Sciences Laboratories, Columbia University, New York
WANG, YQ
LUO, LF
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Sciences Laboratories, Columbia University, New York
LUO, LF
YANG, ES
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Sciences Laboratories, Columbia University, New York
YANG, ES
[J].
IEEE ELECTRON DEVICE LETTERS,
1990,
11
(06)
: 264
-
266
[2]
ALGAAS/GAAS DOUBLE-HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR (DHEBT)
LIU, WC
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan
LIU, WC
GUO, DF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan
GUO, DF
LOUR, WS
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan
LOUR, WS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1992,
39
(12)
: 2740
-
2744
[3]
DC CHARACTERIZATION OF THE ALGAAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTOR
NAJJAR, FE
论文数:
0
引用数:
0
h-index:
0
NAJJAR, FE
RADULESCU, DC
论文数:
0
引用数:
0
h-index:
0
RADULESCU, DC
CHEN, YK
论文数:
0
引用数:
0
h-index:
0
CHEN, YK
WICKS, GW
论文数:
0
引用数:
0
h-index:
0
WICKS, GW
TASKER, PJ
论文数:
0
引用数:
0
h-index:
0
TASKER, PJ
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(26)
: 1915
-
1917
[4]
REDUCTION OF EMITTER THICKNESS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
TADAYON, S
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
TADAYON, S
TADAYON, B
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
TADAYON, B
TASKER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
TASKER, PJ
SCHAFF, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
SCHAFF, WJ
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
EASTMAN, LF
[J].
ELECTRONICS LETTERS,
1989,
25
(12)
: 802
-
803
[5]
APPLICATION OF AN EMITTER EDGE-THINNING TECHNIQUE TO GAAS/ALGAAS DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR
LIU, WC
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
LIU, WC
GUO, DF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
GUO, DF
LOUR, WS
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
LOUR, WS
[J].
APPLIED PHYSICS LETTERS,
1992,
61
(12)
: 1441
-
1443
[6]
EMITTER GRADING IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
TAIRA, K
论文数:
0
引用数:
0
h-index:
0
TAIRA, K
TAKANO, C
论文数:
0
引用数:
0
h-index:
0
TAKANO, C
KAWAI, H
论文数:
0
引用数:
0
h-index:
0
KAWAI, H
ARAI, M
论文数:
0
引用数:
0
h-index:
0
ARAI, M
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(19)
: 1278
-
1280
[7]
ALGAAS/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR (HEBT) PREPARED BY MOLECULAR-BEAM EPITAXY
LIU, WC
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
LIU, WC
LOUR, WS
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
LOUR, WS
[J].
SOLID-STATE ELECTRONICS,
1991,
34
(07)
: 717
-
722
[8]
ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER
RAO, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
RAO, MA
CAINE, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
CAINE, EJ
LONG, SI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
LONG, SI
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
KROEMER, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(11)
: 1845
-
1845
[9]
NEW ALGAAS/GAAS DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
LIU, WC
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
LIU, WC
LOUR, WS
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
LOUR, WS
GUO, DF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, National Cheng-Kung University, Tainan
GUO, DF
[J].
APPLIED PHYSICS LETTERS,
1992,
60
(03)
: 362
-
364
[10]
AN MBE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
HARRIS, JS
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
ASBECK, PM
[J].
INSTITUTE OF PHYSICS CONFERENCE SERIES,
1982,
(63):
: 579
-
580
←
1
2
3
4
5
→