A QUANTITATIVE THEORY OF 1/F TYPE NOISE DUE TO INTERFACE STATES IN THERMALLY OXIDIZED SILICON

被引：4

|

作者：

NICOLLIA.EH

MELCHIOR, H

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1967年 / 46卷 / 09期

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D O I：

10.1002/j.1538-7305.1967.tb04241.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：2019 / &

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