RESONANT TUNNELING FIELD-EFFECT TRANSISTORS

被引：9
|
作者：
WOODWARD, TK [1 ]
MCGILL, TC [1 ]
BURNHAM, RD [1 ]
CHUNG, HF [1 ]
机构：
[1] XEROX CORP, PALO ALTO, CA 94304 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 01期
关键词：
D O I：
10.1016/0749-6036(88)90257-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1 / 9
页数：9
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