ELECTRICAL DETERMINATION OF BAND OFFSETS IN A P-GA0.77IN0.23AS0.20SB0.80/N-GASB TYPE-II HETEROJUNCTION

被引：14
|
作者：
MEBARKI, M [1 ]
BOUKREDIMI, D [1 ]
SADIK, S [1 ]
LAZZARI, JL [1 ]
机构：
[1] UNIV MONTPELLIER 2, EQUIPE MICROOPTOELECTR MONTPELLIER, CNRS, URA 392, F-34095 MONTPELLIER 51, FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期
关键词：
D O I：
10.1063/1.353114
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conduction- and valence-band discontinuities in lattice-matched P-Ga0.77In0.23As0.20Sb0.80/n-GaSb heterojunctions grown by liquid-phase epitaxy have been determined using the capacitance-voltage intercept method. The deduced energy-band diagram shows a staggered-lineup (type II) structure with conduction- and valence-band offsets DELTAE(C) = (330 +/- 50) meV and DELTAE(V) = (120 +/- 50) meV.
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页码：2360 / 2363
页数：4
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