TRAPPING RATE OF POSITRONS IN DEFORMED LEAD OVER TEMPERATURE-RANGE 4-100 K

被引：5
|
作者：
RICEEVANS, P
CHAGLAR, I
ELKHANGI, F
机构：
来源：
PHYSICS LETTERS A | 1978年 / 64卷 / 05期
关键词：
D O I：
10.1016/0375-9601(78)90680-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：450 / 452
页数：3
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