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STRUCTURAL AND OPTICAL-PROPERTIES OF A-SIC-H THIN-FILMS
被引:5
|作者:
MAGAFAS, L
GEORGOULAS, N
GIRGINOUDI, D
THANAILAKIS, A
机构:
[1] Laboratory of Electrical and Electronic Materials Technology, Department of Electrical Engineering, Democritus University of Thrace
关键词:
D O I:
10.1016/S0022-3093(05)80816-6
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this work the dependence of structural, compositional, and optical properties of sputtered a-SiC:H thin films on substrate temperature, T(s), and hydrogen flow rate have been measured. a-SiC:H thin films were rf sputtered on various substrates, using a SiC target of constant composition. The experimental results showed that all films are amorphous with smooth surfaces, for the growth conditions used, and that the C/Si atomic ratio in the alloys is almost independent of substrate temperature. Infrared measurements showed that the hydrogen content in a-SiC:H films varied with T(s) and increases with hydrogen flow rate increasing from 9 sccm to 20 sccm. Finally, the optical absorption coefficient was found to depend strongly on T(s) and hydrogen flow rate.
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页码:146 / 150
页数:5
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