PHOTOLUMINESCENCE OF CDTE THIN-FILMS GROWN WITH ATOMIC LAYER EPITAXY

被引:0
|
作者
SOPANEN, M
TUOMI, T
机构
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:179 / 183
页数:5
相关论文
共 50 条
  • [1] DENSITY OF ZNS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY
    OIKKONEN, M
    TUOMI, T
    LUOMAJARVI, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) : 1070 - 1074
  • [2] Photoluminescence Studies of ZnO thin films grown by atomic layer epitaxy
    Lim, JM
    Shin, KC
    Kim, HW
    Lee, CM
    [J]. JOURNAL OF LUMINESCENCE, 2004, 109 (3-4) : 181 - 185
  • [3] CDTE THIN-FILMS GROWN BY HOT WALL EPITAXY
    LOPEZOTERO, A
    HUBER, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 214 - 217
  • [4] ATOMIC LAYER EPITAXY OF SEMICONDUCTOR THIN-FILMS
    BEDAIR, SM
    [J]. ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES, 1990, (195): : 17 - 37
  • [5] ALKALINE-EARTH SULFIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY
    TAMMENMAA, M
    ANTSON, H
    ASPLUND, M
    HILTUNEN, L
    LESKELA, M
    NIINISTO, L
    RISTOLAINEN, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 84 (01) : 151 - 154
  • [6] ELLIPSOMETRIC STUDIES ON ZINC-SULFIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY
    OIKKONEN, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1385 - 1393
  • [7] DEVELOPMENT OF CRYSTALLINITY AND MORPHOLOGY IN HAFNIUM DIOXIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY
    RITALA, M
    LESKELA, M
    NIINISTO, L
    PROHASKA, T
    FRIEDBACHER, G
    GRASSERBAUER, M
    [J]. THIN SOLID FILMS, 1994, 250 (1-2) : 72 - 80
  • [8] ATOMIC LAYER EPITAXY GROWTH OF ALN THIN-FILMS
    ELERS, KE
    RITALA, M
    LESKELA, M
    JOHANSSON, LS
    [J]. JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 1021 - 1027
  • [9] ATOMIC LAYER EPITAXY GROWTH OF TIN THIN-FILMS
    RITALA, M
    LESKELA, M
    RAUHALA, E
    HAUSSALO, P
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (08) : 2731 - 2737
  • [10] ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CDTE-FILMS GROWN ON CDTE (110) SUBSTRATES
    PESSA, M
    HUTTUNEN, P
    HERMAN, MA
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 6047 - 6050